technical data pnp darlington power silicon transistor qualified per mil - prf - 19500/527 devices qualified level 2N6648 2n6649 2n6650 jantx jantxv maximum ratings ratings symbol 2N6648 2n6649 2n6650 unit collector - emitter voltage v ceo - 40 - 60 - 80 vdc collector - base voltage v cbo - 40 - 60 - 80 vdc emitter - base voltage v ebo - 5.0 vdc base current i b - 0.25 adc collector current i c - 10 adc total power dissipation @ t a = +25 0 c (1) @ t c = +25 0 c (2) p t 5.0 85 w w operating & storage junction temperature range t j , t stg - 65 to +175 0 c thermal characteristics characteristics symbol max. unit thermal resistance junction - to - case r q jc 1.76 0 c/w 1) derate linearly 33.3 mw/ 0 c for t a > +25 0 c 2) derate linearly 567 mw/ 0 c for t c > +25 0 c to - 3* ( to - 204aa) *see appendix a for package outline electrical characteristics (t c = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 200 madc 2N6648 2n6649 2n6650 v (br) c eo - 40 - 60 - 80 vdc collector - emitter breakdown voltage i c = 200 madc, r bb = 100 w 2N6648 2n6649 2n6650 v (br) cer - 40 - 60 - 80 vdc collector - base cutoff current v cb = - 40 vdc 2N6648 v cb = - 60 vdc 2n6649 v cb = - 80 vdc 2n6650 i cbo - 1.0 - 1.0 - 1.0 madc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2N6648, 2n6649, 2n6650 jan series electrical characteristics (con?t) characterist ics symbol min. max. unit emitter - base cutoff current v eb = 5.0 vdc i ebo - 10 madc collector - emitter cutoff current v ce = - 40 vdc 2N6648 v ce = - 60 vdc 2n6649 v ce = - 80 vdc 2n6650 i ceo - 1.0 - 1.0 - 1.0 madc collector - emitter cutoff curren t v ce = - 40 vdc, v be = 1.5 vdc 2N6648 v ce = - 60 vdc, v be = 1.5 vdc 2n6649 v ce = - 80 vdc, v be = 1.5 vdc 2n6650 i cex - 0.3 - 0.3 - 0.3 madc on characteristics (3) forward - current transfer ratio i c = - 1.0 adc, v ce = 3.0 vdc i c = - 5.0 adc, v ce = 3.0 vdc i c = - 10 adc, v ce = 3.0 vdc h fe 300 1,000 100 20,000 collector - emitter saturation voltage i c = - 5 .0 adc, i b = - 10 madc i c = - 10 adc, i b = - 0.1 adc v ce(sat) - 2.0 - 3.0 vdc base - emitter voltage i c = - 5.0 adc, v ce = - 3.0 vdc i c = - 10 adc, v ce = - 3.0 vdc v be(on) - 2.8 - 4.5 vdc dynamic characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = - 1.0 adc, v ce = - 5.0 vdc, f = 1.0 mhz ? h fe ? 50 400 output capacitan ce v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 300 pf switching characteristics turn - on time v cc = - 30 vdc; i c = - 5.0 adc; i b1 = - 20 madc t on 2.5 m s turn - off time v cc = - 30 vdc; i c = - 5.0 adc; i b1 = - i b2 = 20 madc t off 10 m s safe opera ting area dc tests t c = +25 0 c, 1 cycle, t = 1.0 s test 1 v ce = - 8.5 vdc, i c = - 10 adc test 2 v ce = - 25 vdc, i c = - 3.4 adc test 3 v ce = - 40 vdc , i c = - 0.9 adc 2N6648 v ce = - 60 vdc, i c = - 0.3 adc 2n6449 v ce = - 80 vdc, i c = - 0.14 adc 2n6650 (3) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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